Version: 3/20/2019 2
Additional Course Information
Topical Outline: Each offering of this course must include the following topics (be sure to include information regarding lab,
practicum, and clinical or other non-lecture instruction).
The following performance will be expected of any student completing this course with a passing grade. There is no
absolute time limit on the performance of these objectives, unless noted, but the grade received by the student will
depend, in part, on the relative speed and precision of the student's performance in these tasks. Where subjective
evaluations are indicated, the instructor will make these judgments based on his or her knowledge of the skills required
to place a graduate with the expectation of successful on-job performance.
The student will be expected to perform the following tasks in written examination or laboratory demonstration:
• Identify the anode and cathode of the diode symbol, and of a diode with typical case markings.
• Draw the Voltage-Current characteristics of a silicon junction diode, marking Ir, Vbeo, and indicating the forward
voltage drop.
• Demonstrate ability to successfully test a diode to determine anode and cathode using only an ohmmeter
• Correctly explain the safety factors involved in the use of hot-chassis power supplies, and how the isolation
transformer reduces the shock hazard.
• Calculate the proper size for a simple filter capacitor when given the load current, the line frequency, and the
required ripple voltage for a half-wave or full- wave rectifier.
• Draw a correct diagram for a half-wave and a full-wave CT rectifier.
• Draw a correct diagram for the full-wave bridge rectifier.
• Calculate the correct diode PIV necessary in a half- wave or full-wave rectifier.
• Calculate the approximate reduction in ripple voltage provided by a pi-section filter given the input ripple, input
frequency, inductor value, and capacitor value.
• Estimate the output voltage for a choke input filter, given the RMS voltage of the transformer secondary.
• Correctly draw the schematic diagrams for the NPN and PNP bipolar transistor.
• Show laboratory skills sufficient to identify the base of a bipolar transistor, given*good transistor and an
ohmmeter.
• Show ability to separate good and bad bipolar transistors using only an ohmmeter.
• Correctly measure the beta of a good bipolar transistor, given an ammeter, a voltmeter, power supply, and
resistors.
• Find the power dissipation of a bipolar transistor given the circuit values for a common-emitter circuit. Design
and construct a common-emitter circuit which will produce a given voltage at the collector, given on the beta of
the transistor and a power supply voltage.
• Show how changes in beta effects changes in Q-point.
• List the meaning of, and the advantages of operation in the saturation and cutoff regions of bipolar transistors.
• Define linear operation of the common-emitter circuit.
• Draw diagrams showing the relationship between bias point and output voltage clipping for the common-
emitter amplifier.
• Demonstrate ability to design a common- emitter amplifier with simple or voltage-divider biasing to produce a
specified Q-point and voltage gain.
• Demonstrate his or her ability to set voltage gain in the common-emitter amplifier independently of stability
criteria, by use of the emitter-bypass capacitor.
• Construct a properly biased common-collector circuit.
• Give a valid comparison of the output impedance/voltage gain of the common-emitter and common- collector
circuit configurations.
• Find correct input impedance (resistive), voltage gain, and output voltage limits for the simple common- emitter
and common-collector circuits.
• Draw a diagram correctly showing collector biasing for the common-emitter circuit.
